Microstructure and Performances of SiC/Al Electronic Packing Materials Prepared by Pressureless Infiltration
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Graphical Abstract
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Abstract
Using F280 SiC powders and AlSi12Mg8 aluminium alloy as raw materials, the high SiC content SiC/Al composite materials were prepared by pressureless infiltration method, and microstructure and performances of the prepared SiC/Al composites were studied. The results indicate that the microstructure of SiC/Al composites were quite uniform and density without obvious pores defect. The interface reaction products were mainly composed of Mg2Si, MgO and MgAl2O4. All performances of the prepared SiC/Al composites met the requirement of electronic packaging materials with the average density of 2.93 g·cm-3, bending strength of being higher than 320 MPa, coefficient of thermal expansion of 6.14×10-6- 9.24×10-6 K-1 and thermal conductivity of 173 W·m-1·K-1.
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