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    WANG Dong-mei, LU Jun, CHEN Chang-qi, WU Yu-cheng, ZHENG Zhi-xiang. XRD ANALYSIS OF ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART A:PHYSICAL TESTING, 2006, 42(1): 19-22.
    Citation: WANG Dong-mei, LU Jun, CHEN Chang-qi, WU Yu-cheng, ZHENG Zhi-xiang. XRD ANALYSIS OF ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART A:PHYSICAL TESTING, 2006, 42(1): 19-22.

    XRD ANALYSIS OF ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

    • Polycrystalline ZnO films were deposited on glass substrates by radio frequency (RF) magnetron sputtering technique. The as-deposited films were annealed at various temperatures (350~600℃) in air and at 600℃ in N2. The influence of sputtering parameters such as sputtering power, O2 partial pressure, substrate temperature and annealing on the crystallization of the ZnO films was investigated by X-ray diffraction (XRD). The results show that the crystallization of the film has been promoted by desirable substrate temperature or annealing.
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