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    JI Hong, WANG Chao-qun, WANG Si-ai, FENG De-Shen. GE SINGLE CRYSTAL STRESS MEASUREMENT BY X-RAY METHOD[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART A:PHYSICAL TESTING, 2008, 44(6): 303-305.
    Citation: JI Hong, WANG Chao-qun, WANG Si-ai, FENG De-Shen. GE SINGLE CRYSTAL STRESS MEASUREMENT BY X-RAY METHOD[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART A:PHYSICAL TESTING, 2008, 44(6): 303-305.

    GE SINGLE CRYSTAL STRESS MEASUREMENT BY X-RAY METHOD

    • The stresses of the Ge single crystal have been measured according to a new principle proposed by Hiroshi SUZUKI and the asymmetrical Bragg diffraction technique. Compared with the conventional methods,the new method can determine the stress by using multiple regression equations. So the effect of the reliability of the stress-free plane spacing can be avoided. The method may be applied to other single crystal materials and high textured orientation materials.
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