STRUCTURE AND PROPERTIES OF ZnO/AlN BILAYERS PREPARED BY RF MAGNETRON REACTIVE SPUTTERING

ZnO/AlN bilayers were deposited on Si(100) subtrate by RF magnetron reactive sputtering. The structure,surface morphology,electrical resistivities and fluorescence spectrum of the ZnO/AlN bilayers were determined by using XRD,AFM,LCR HITESTER and fluoescence spectromter. Compared with ZnO/Si films prepared by using the same processing parameter,the ZnO/AlN bilayers,with a preferred orientation in c-axis,have a litter membrance stress and root-mean-square roughness,and a lower electrical resistivity. The fluorescence spectrum shows that the crystalline quality of ZnO/AlN bilayers is better than that of ZnO/Si films.