A testing method for determining trace oxygen elements using time of flight secondary ion mass spectrometry
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Abstract
Trace oxygen elements in CaF2 crystal, YF3 thin films and Au thin films were tested using time of flight secondary ion mass spectrometry. The results show that by changing the size of the analytical ion source aperture to change the ion beam current, the unit area ion dose acting on the sample surface was changed. As the ion beam current increased, the fluoride and oxygen ion yields of CaF2 crystal and YF3 film both increased, indicating the presence of oxygen in CaF2 crystal and YF3 film. The test results were consistent with the UV spectrum test results of CaF2 and the infrared spectrum test results of YF3 film. When the ion beam current increased, the Au ion yield increased, while the oxygen ion yield showed no significant change, indicating that the detected oxygen element came from residual gas in the experimental environment, and there was no oxygen element present in the Au film.
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