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    GAO Xueping, ZHANG Aimin. Cause Analysis on Abnormal Energy Spectrum Data of Scanning Electron Microscope[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART A:PHYSICAL TESTING, 2020, 56(8): 13-15. DOI: 10.11973/lhjy-wl202008003
    Citation: GAO Xueping, ZHANG Aimin. Cause Analysis on Abnormal Energy Spectrum Data of Scanning Electron Microscope[J]. PHYSICAL TESTING AND CHEMICAL ANALYSIS PART A:PHYSICAL TESTING, 2020, 56(8): 13-15. DOI: 10.11973/lhjy-wl202008003

    Cause Analysis on Abnormal Energy Spectrum Data of Scanning Electron Microscope

    • The Ag coating with thickness of 400 nm was electrochemical deposited on the SiO2 matrix, and then the composition was characterized by scanning electron microscope energy spectrometer, the results were abnormal. The causes of abnormal phenomenon was analyzed by atomic force microscope (AFM) and Monte Carlo Simulation software. The results show that the characteristic X-ray energy of element O is Kα=0.525 keV, the low energy level was difficult to penetrate the Ag coating with thickness of 400 nm. The characteristic X-ray energy of element Si is Kα=1.74 keV, Kβ=1.838 keV, the higher energy level can penetrate the thickness of Ag coating.
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