Preparation of SnO₂ Nanometer Film by DC Sputtering and Its Characterization

SnO₂ nanometer film was prepared by direct-current (DC) sputtering method with a target matrial of pure tin. The phase structure and thickness of the nanometer film was respectively analyzed and tested by X-ray diffractometer, transmission electron microscope and step profiler. The results show that crystalline SnO₂ nanometer film composed of SnO₂ nanoparticles with diameter ranging from several nanometers to dozens of nanometers could be prepared on substrate of monocrystalline silicon. Meanwhile, amorphous SnO₂ nanometer film could be prepared on microslide substrate. By controlling the sputtering time, a series of SnO₂ nanometer film with different thickness could be obtained and the formula of film thickness of SnO₂ nanometer film prepared by DC sputtering method was d=0.29UIt (d being film thickness, Å,1 Å=0.1 nm; U being sputtering voltage, V; I being sputtering current, A; t being sputtering time, s).