Abstract: ZnO thin films were prepared by two methods. One was first prepared by IBD (ion beam sputtering deposition) and then annealed at 700℃ in O2. The another was prepared by RF magnetron sputtering and also annealed at 600℃ in O2. The structures ,morphologies,and electrical resistivities of the ZnO films prepared by above two methods were determined by using XRD,AFM and LCR HITESTER. Compared with RF magnetron method,the ZnO films fabricated by ion beam sputtering have a littery growth orientation. Its average surface roughness is bigger than that by RF magnetron sputtering. Also its electrical resistivity is higher too.