Abstract: Keeping the ratio of Ar but changing that of O2:N2,the N-doped ZnO films were grown on quartz glass substrate by using RF magnetron sputtering with a high-purity Zn target. The crystal structure,optical and electrical properties of the films were characterized by X-ray diffraction,fluorescence spectrometry,SEM and pico-ammeter/voltage source. The results showed that the N-doped ZnO thin films had a strong c -axis preferential orientation,same as that without N-dopping. As an acceptor impurity,the amount of doped nitrogen effectively reduced the resistivity and influences the crystal structure and properties of the films.