Abstract: The A13+ doped ZnO thin films were prepared on glass substrates by Sol-Gel Spinning method. The as-grown films were annealed at various temperatures (400℃-600℃) in air and different atmospheres (Air,H2 and Ar ) at 500℃. Thin films were characterized using scanning electron microscopy and X-ray diffraction. Their transmittances were measured. The results show that with increasing annealing temperature in air,the intensity of (002) diffraction peak becomes stronger and the full width at half the maximum (FWHM) of the (002) diffraction peak decreases gradually. The transmittance is improved. The range of grain size is from 23.50nm to 34.55nm. The property of films prepared in H2 or Ar is better than that in air.