RF溅射稀土(La,Nd)掺杂ZnO薄膜的结构

RESEARCH OF STRUCTURAL PROPERTIES OF RE-DOPED ZnO THIN FILMS GROWN BY RF MAGNETRON SPUTTERING

摘要: 通过射频磁控溅射技术在Si(111)衬底上制备了未掺杂和镧、钕掺杂ZnO薄膜。XRD分析表明,ZnO薄膜具有c轴择优生长,镧、钕掺杂ZnO薄膜为自由生长的纳米多晶薄膜。用AFM观测薄膜的表面形貌,镧、钕掺杂ZnO薄膜表面形貌粗糙。

Abstract: The ZnO thin film and rare earth (RE=La,Nd) doped ZnO thin films were deposited on Si(111) substrate by RF magnetron sputtering and annealed at 400℃ under air. As analyzed by XRD,ZnO thin films with high c-axis orientation growth was realized,RE-doped ZnO thin films were nano-multi-crystal thin films with free growth. The rough surface morphology of RE-doped ZnO thin films were observed by AFM.