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    扫描电镜能谱数据异常原因分析

    Cause Analysis on Abnormal Energy Spectrum Data of Scanning Electron Microscope

    • 摘要: 在SiO2基体上电化学沉积400 nm厚度银涂层,然后用扫描电镜能谱仪进行成分表征时,结果出现异常现象。利用原子力显微镜(AFM)和蒙特卡洛模拟(Monte Carlo Simulation)软件对该异常现象产生原因进行了分析。结果表明:氧元素的特征X射线能量Kα=0.525 keV,该能量能级较低难以穿透400 nm厚度的银涂层,硅元素的特征X射线能量Kα=1.74 keV, Kβ=1.838 keV,能级较高,能够穿透该厚度的银涂层。

       

      Abstract: The Ag coating with thickness of 400 nm was electrochemical deposited on the SiO2 matrix, and then the composition was characterized by scanning electron microscope energy spectrometer, the results were abnormal. The causes of abnormal phenomenon was analyzed by atomic force microscope (AFM) and Monte Carlo Simulation software. The results show that the characteristic X-ray energy of element O is Kα=0.525 keV, the low energy level was difficult to penetrate the Ag coating with thickness of 400 nm. The characteristic X-ray energy of element Si is Kα=1.74 keV, Kβ=1.838 keV, the higher energy level can penetrate the thickness of Ag coating.

       

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